• DocumentCode
    860148
  • Title

    Comments on "A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs"

  • Author

    Kaija, Tero ; Heino, P.

  • Author_Institution
    Inst. of Electron., Tampere Univ. of Technol., Finland
  • Volume
    54
  • Issue
    3
  • fYear
    2006
  • fDate
    3/1/2006 12:00:00 AM
  • Firstpage
    1295
  • Lastpage
    1296
  • Abstract
    For original article by Ming-Hsiang Cho et al. see ibid., vol.53, no.9, p.2926-34, Sep. 2005.
  • Keywords
    MOSFET; S-parameters; microwave measurement; multiport networks; semiconductor device measurement; semiconductor device testing; silicon; Si; deep-submicrometer MOSFET; dummy fixture set; microwave on-wafer characterization; scattering parameters; shield-based three-port de-embedding method; test fixture set; Bars; Fixtures; Insertion loss; Loss measurement; MOSFET circuits; Microwave measurements; Microwave theory and techniques; Microwave transistors; Silicon; Testing; De-embedding; MOSFET; microwave measurements; scattering parameters;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2006.869701
  • Filename
    1603880