DocumentCode
860189
Title
Adjacent Cell Interaction and MRAM Error Rate Prediction
Author
Zhu, Li-Yan ; Guo, Yimin
Author_Institution
Husko Inc, Milpitas, CA
Volume
43
Issue
6
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
2334
Lastpage
2336
Abstract
Effects of weak magnetostatic interaction among adjacent cells on the array quality factor (AQF) of a conventional single particle MRAM array are analyzed by the mean-field theory. Inaccuracy of the theory at modest interaction is discussed, and attributed to the emergence of stripe pattern. A numerical method is also described, for quantifying the effect of magnetostatic interaction on a write margin test. This methods allows write margins on common test patterns and on the actual data file (which is substantially random) to be compared
Keywords
Q-factor; error analysis; magnetic storage; random-access storage; MRAM error rate prediction; adjacent cell interaction; array quality factor; magnetostatic interaction; mean-field theory; stripe pattern; weak magnetostatic interaction; write margin test; Coercive force; Equations; Error analysis; Magnetic analysis; Magnetic devices; Magnetic field measurement; Magnetic tunneling; Magnetostatics; Q factor; Testing; Array quality factor; MRAM; error rate; magnetostatic interaction;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2007.893804
Filename
4202835
Link To Document