• DocumentCode
    860337
  • Title

    InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

  • Author

    Hooper, S.E. ; Kauer, M. ; Bousquet, V. ; Johnson, K. ; Barnes, J.M. ; Heffernan, J.

  • Author_Institution
    Sharp Labs. of Eur. Ltd., Oxford, UK
  • Volume
    40
  • Issue
    1
  • fYear
    2004
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ∼30 kA cm-2.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; photolithography; quantum well lasers; sputter etching; waveguide lasers; wide band gap semiconductors; 400 nm; InGaN; blue-violet laser diodes; high quality devices; molecular beam epitaxy; multiple quantum well laser diodes; photolithographic processing; plasma etching; pulsed current injection conditions; ridge waveguide lasers; room temperature; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040015
  • Filename
    1260660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860337