Electric-Pulse-Induced Resistance Switching in Magnetoresistive Manganite Films Grown by Metalorganic Chemical Vapor Deposition

Author

Nakamura, Toshihiro ; Homma, Kohei ; Tai, Ryusuke ; Nishio, Akira ; Tachibana, Kunihide

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ.

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

3070

Lastpage

3072

Abstract

Pr_1-xCa_xMnO₃ (PCMO) films with the desired atomic composition were deposited at low temperature (480 degC) by metalorganic chemical vapor deposition (MOCVD) using in situ infrared spectroscopic monitoring. The electric-pulse-induced resistance switching was observed in PCMO-based devices with various kinds of metal electrodes. The resistance change was dependent on the Ca/(Pr+Ca) composition ratio of the films and the kind of the metal electrodes. Various resistance states for the multilevel data storage application were observed, depending on polarity and voltage of applied pulses

Keywords

MOCVD coatings; calcium compounds; colossal magnetoresistance; infrared spectra; magnetic thin films; magnetoresistive devices; praseodymium compounds; random-access storage; 480 degC; MOCVD; PCMO-based devices; Pr_1-alphaCa_alphaMnO₃; atomic composition; composition ratio; electric-pulse-induced resistance switching; in situ infrared spectroscopy; magnetoresistive manganite films; metal electrodes; metalorganic chemical vapor deposition; multilevel data storage; resistance states; Atomic layer deposition; Chemical vapor deposition; Electric resistance; Electrodes; Infrared spectra; Infrared surveillance; MOCVD; Magnetic switching; Magnetoresistance; Temperature; Colossal magnetoresistance; manganite perovskite; resistance random access memory (ReRAM); resistance switching;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.893115

Filename

4202857