DocumentCode
860652
Title
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate
Author
Chini, A. ; Buttari, D. ; Coffie, R. ; Heikman, S. ; Keller, S. ; Mishra, U.K.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Volume
40
Issue
1
fYear
2004
Firstpage
73
Lastpage
74
Abstract
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 4 GHz; AlGaN-GaN; electrically shorted gate; field-plated HEMT; high efficiency; high power density; knee-voltage walkout reduction; large signal characteristics; overlapping field-plate structure; passivated devices; peak power added efficiencies; pulsed I-V measurements; reduced dispersion phenomena; sapphire substrate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040017
Filename
1260685
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