Title :
Noise study of low-dimensional quantum-well semiconductor laser amplifiers
Author :
Komori, Kazuhiro ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
9/1/1992 12:00:00 AM
Abstract :
Low noise characteristics of semiconductor laser amplifiers (SLAs) consisting of low-dimensional quantum-well structures are obtained theoretically using density matrix theory. Due to a sharper gain spectrum as well as a smaller population inversion parameter in quantum-wire and quantum-box structures, predominant two beat noises of traveling-wave SLAs were found to be reduced in the lower dimensional quantum-well structures, even in solitary devices without a narrow bandpass filter. The noise figure can be reduced to 3.3 dB in a quantum-box structure, which nears the theoretical limit of 3 dB
Keywords :
electron device noise; laser theory; population inversion; semiconductor junction lasers; 3.3 dB; beat noises; density matrix theory; gain spectrum; low noise characteristics; low-dimensional quantum-well semiconductor laser amplifiers; noise figure; population inversion parameter; quantum wire structure; quantum-box structures; Band pass filters; Laser noise; Laser theory; Low-noise amplifiers; Noise figure; Noise reduction; Quantum well lasers; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
