Analytical DC model for p-type QW-HEMTs for CAD applications

Author

Yu, D.C. ; Abdel-Motaleb, I.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

Volume

140

Issue

1

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

7

Lastpage

15

Abstract

An analytical charge control model for p-type insulated-gate inverted-structure high electron mobility transistors (I²-HEMTs) and double heterojunction high electron mobility transistors (DH-HEMTs) has been developed. In this model the quasitriangular potential well approximation is used to relate the top-heterojunction Fermi potential to the two-dimensional hole gas (2DHG) concentration inside the quantum well. Based on this charge-control model, an accurate DC current-voltage relationship is obtained. The results from this model are found to be in agreement with the experimental results

Keywords

CAD; electronic engineering computing; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 2DHG concentration; CAD applications; DC current-voltage relationship; DC model; Fermi potential; analytical charge control model; double heterojunction; insulated-gate inverted-structure high electron mobility transistors; p-type; quantum well; quasitriangular potential well approximation; two-dimensional hole gas;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

197469