Title :
Temperature insensitive 1.3 μInGaAs=GaAs quantum dot distributed feedback lasers for 10 Gbit=s transmission over 21km
Author :
Gerschütz, F. ; Fischer, M. ; Koeth, J. ; Chacinski, M. ; Schatz, R. ; Kjebon, O. ; Kovsh, A. ; Krestnikov, I. ; Forchel, A.
Abstract :
Long wavelength monomode InGaAs/GaAs quantum dot (QD) distributed feedback (DFB) lasers with emission wavelength around 1325 nm are presented. Threshold currents below 19 mA for operating temperatures up to 70degC and output powers of 10 mW at 25degC (6 mW at 70degC) are observed. Error-free 10 Gbit/s transmission over 21 km fibre with an extinction ratio of 8.5 dB at room temperature (5.1 dB at 70degC) is demonstrated. The low threshold, low temperature sensitivity and high modulation speed were realised using complex coupled DFB lasers with ten stacks of self-organised MBE-grown QD layers and p-type modulation doping
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; quantum dot lasers; 1.3 micron; 10 Gbit/s; 10 mW; 21 km; 25 C; 6 mW; 70 C; InGaAs-GaAs; emission wavelength; p-type modulation doping; quantum dot distributed feedback lasers; self-organised MBE-grown QD layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20063401
