Title :
Epitaxial growth of NbN and NbC/sub x/N/sub 1-x/ films on 3C-SiC film-covered Si wafers
Author :
Shoji, A. ; Kiryu, S. ; Kohjiro, S.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
Epitaxial NbN and NbC/sub x/N/sub 1-x/ (x<0.3) films were fabricated on 3C-SiC film-covered Si wafers. It is found that epitaxial NbN films fabricated on 3C-SiC/Si substrates have about one degree higher T/sub c/´s than those for epitaxial NbN films fabricated on MgO substrates. T/sub c/ and normal-state resistivity of fabricated epitaxial NbC/sub x/N/sub 1-x/ films depended on the 3C-SiC overlayer thickness of substrates. From results of R-T characteristic measurements, it is deduced that contact resistance of 3C-SiC and NbN strongly depends on the growth orientation of crystals.<>
Keywords :
contact resistance; niobium compounds; superconducting epitaxial layers; superconducting transition temperature; type II superconductors; 3C-SiC film-covered Si wafers; NbC/sub x/N/sub 1-x/ films; NbCN; NbN; NbN films; SiC-Si; contact resistance; critical temperature; epitaxial growth; normal-state resistivity; resistance-temperature characteristic; Crystals; Dielectric substrates; Epitaxial growth; Lattices; Niobium compounds; Oscillators; Semiconductor films; Superconducting epitaxial layers; Superconducting films; Superconducting materials;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
