Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFETs studied by three-level charge pumping

Author

Yuan, Xiao-Jie ; Kivi, Mike ; Taylor, Stephen ; Hurley, Paul

Author_Institution

Dept. of Yield Eng., Chartered Semicond. Ltd., Singapore

Volume

17

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

239

Lastpage

241

Abstract

High field Fowler-Nordheim (F-N) stress effects on interface-trap density and emission cross sections in n-MOSFETs have been studied using three-level charge pumping (3LCP). The results show that 3LCP is sensitive to changes in trap cross section as a function of energy in the bandgap. An asymmetric change in electron and hole emission cross sections following F-N tunneling injection is found. The work also provides further insight into the influence of hot electrons on interface trap generation in MOSFETs in both the upper and lower bandgap following electrical stress.

Keywords

MOSFET; electron traps; hole traps; hot carriers; interface states; tunnelling; Fowler-Nordheim tunneling injection; bandgap states; electrical stress; emission cross sections; hot electrons; interface trap density; n-MOSFETs; three-level charge pumping; Charge carrier processes; Charge pumps; Current measurement; Electron emission; Electron traps; MOSFET circuits; Photonic band gap; Pulse measurements; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.491841

Filename

491841