Silicon ion implantation of YBaCuO films for bolometer application

Author

He, X. ; Musolf, J. ; Waffenschmidt, E. ; Heime, K. ; Wolf, H. ; Pierz, Klaus

Author_Institution

Inst. fur Halbleitertechnik Lehrstuhl I, Tech. Hochschule Aachen, Germany

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

2439

Lastpage

2442

Abstract

Silicon ion implantation was used to shift the critical temperature of YBaCuO films continuously to lower temperatures. The variation of T/sub c/ and other superconducting properties with ion fluence was investigated in detail. Based on these results a new bolometer structure was designed, fabricated and characterised. The sensor area of the bolometer consists of a locally implanted area with a lower critical temperature, while the contact pads and connecting lines retain the original T/sub c/. At the operating temperature the bolometer has a exactly defined temperature sensitive area and shows a lower contact resistance. Finally the feasibility of integrated bolometer arrays is discussed.<>

Keywords

barium compounds; bolometers; electron device manufacture; high-temperature superconductors; ion implantation; silicon; superconducting thin films; superconducting transition temperature; yttrium compounds; YBaCuO films; YBaCuO:Si; bolometer; connecting lines; contact pads; contact resistance; critical temperature; integrated bolometer arrays; sensor; silicon ion implantation; superconducting properties; temperature sensitivity; Bolometers; Contact resistance; Ion implantation; Joining processes; Semiconductor films; Sensor phenomena and characterization; Silicon; Superconducting films; Temperature sensors; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403084

Filename

403084