High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure

Author

Whitehead, Mark ; Parry, Guillaume

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

25

Issue

9

fYear

1989

fDate

4/27/1989 12:00:00 AM

Firstpage

566

Lastpage

568

Abstract

The authors have modelled the properties of a multiple quantum well pin diode optical modulator with the natural semiconductor reflectivity (R approximately=0.3) at its front surface and a high reflector (R approximately=0.95), such as an integrated semiconductor quarter-wave stack, at the back. By using resonant electroabsorption, rather than electrorefraction, the calculations show that it is possible to achieve contrast ratios of over 200, with less than 3 dB insertion loss.

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; integrated optics; optical modulation; p-i-n diodes; reflectivity; semiconductor device models; semiconductor quantum wells; 3 dB; GaAs-AlGaAs; MQW p-i-n diode optical modulator; asymmetric multiple quantum well Fabry-Perot structure; contrast ratios; high contrast reflection modulation; high reflector; insertion loss; integrated semiconductor quarter-wave stack; natural semiconductor reflectivity; normal incidence; resonant electroabsorption;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890386

Filename

19783