Title :
Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 mu m
Author :
Zyskind, J.L. ; DeWinter, J.C. ; Burrus, C.A. ; Centanni, J.C. ; Dentai, A.G. ; Pollack, M.A.
Author_Institution :
AT&T Bell Labs., Crawford Hill Lab., Holmdel, NJ, USA
fDate :
4/27/1989 12:00:00 AM
Abstract :
GaInAsSb/AlGaAsSb double heterostructure lasers with low pulsed threshold current density were grown previously by liquid-phase epitaxy using a complicated five-layer structure to relieve the strain arising from graded cladding layers. Double heterostructures have now been grown over a narrow temperature range to minimise this grading. These simpler three-layer DH lasers have high room-temperature quantum efficiencies (5.4% per facet) and low broad-area threshold current densities (2.6 kA/cm2) which are uniform from chip to chip.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; semiconductor junction lasers; 2.2 micron; 5.4 percent; GaInAsSb-AlGaAsSb double heterostructure lasers; graded cladding layers; high quantum efficiency; liquid-phase epitaxy; low pulsed threshold current density; three-layer DH lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890387
