Performance of Organic Thin-Film Transistors Controlled by Electrode and Device Structures

Author

Yu, Chien-Hsien ; Lei, Tan-Fu ; Liao, Jin-Long ; Yan, Jing-Yi ; Ho, Jia-Chong

Author_Institution

Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu

Volume

5

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

198

Lastpage

201

Abstract

We have fabricated organic thin-film transistors (OTFTs) of top contact (TC) structures using silver electrode based on triethylsilylethynyl anthradithiophene (TES-ADT) with mobility above 0.41 cm² s^-1 V^-1, current modulation higher than 5 times 10⁷ and sub-threshold swing below 0.65 V/dec. The electrical characteristics of OTFTs are not only corresponding to the work function of source and drain electrodes materials but also to the surface tension and deposition energy of them. The effects of work function and surface tension dominate the electrical characteristics in bottom contact (BC) device. On the other hand, TC device is affected by deposition energy dominantly.

Keywords

electrodes; organic compounds; thin film transistors; OTFT; bottom contact device; current modulation; deposition energy; device structures; drain electrodes materials; organic thin-film transistors; silver electrode; source electrodes materials; surface tension; top contact structures; triethylsilylethynyl anthradithiophene; Contact resistance; Dielectric substrates; Displays; Electric variables; Electrodes; Indium tin oxide; Magnetic materials; Organic thin film transistors; Surface tension; Thin film transistors; Contact resistance; organic compounds; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2009.2016438

Filename

4918986