Monolithic InGaAsP-InP tapered laser amplifier gate 2×2 switch matrix with gain

A novel integration design is demonstrated for a 2×2 switching matrix based on laser amplifier gates. For the first time, low loss single-heterostructure waveguides are integrated with double-buried-heterostructure tapered laser amplifiers. This new integration scheme provides a very simple fabrication process with only two epitaxial growth steps. At the on-state (160 mA injected gating current), devices exhibit over 10 dB net chip gain for both input polarisations and all switching matrix paths. Switching operation with gain is achieved