• DocumentCode
    861918
  • Title

    High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP

  • Author

    Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
  • Volume
    32
  • Issue
    7
  • fYear
    1996
  • fDate
    3/28/1996 12:00:00 AM
  • Firstpage
    689
  • Lastpage
    691
  • Abstract
    A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59 GHz, and a maximum oscillation frequency of 68 GHz were obtained for a 5×15 μm2 self-aligned HBT. A minimum noise figure of 1.4-2.6 dB was measured in the frequency range of 2-18 GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials
  • Keywords
    III-V semiconductors; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device noise; semiconductor growth; vapour phase epitaxial growth; 1.4 to 2.6 dB; 2 to 18 GHz; 59 GHz; 68 GHz; C-doped HBT; EHF; GaInP:C-GaAs:C; MOCVD; SHF; TBA; TBP; heterojunction bipolar transistor; low noise device; self-aligned HBT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960448
  • Filename
    491904
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=861918