Title :
Multilevel devices of YBa/sub 2/Cu/sub 3/O/sub 7/ with NdGaO/sub 3/ barrier
Author :
Grundler, D. ; Krumme, J.-P. ; David, B. ; Doessel, O.
Author_Institution :
Inst. of Appl. Phys., Hamburg Univ., Germany
fDate :
6/1/1995 12:00:00 AM
Abstract :
We have fabricated YBa/sub 2/Cu/sub 3/O/sub 7/ ramp-type junctions incorporating a barrier layer of NdGaO/sub 3/ with a nominal thickness of 2 nm. The junctions exhibit pronounced Josephson effects and operate up to 82 K. The characteristics are well described within the resistively shunted junction model. We observe large hysteresis parameters /spl beta//sub c/ even at elevated temperatures. The output voltage of a high-T/sub c/ dc SQUID is found to benefit from the intrinsic junction capacitance.<>
Keywords :
Josephson effect; SQUIDs; barium compounds; critical currents; high-temperature superconductors; neodymium compounds; superconducting device testing; superconductor-insulator-superconductor devices; yttrium compounds; 2 nm; 82 K; I-V characteristics; Josephson effects; NdGaO/sub 3/; NdGaO/sub 3/ barrier; SIS device; YBa/sub 2/Cu/sub 3/O/sub 7/; YBa/sub 2/Cu/sub 3/O/sub 7/ ramp-type junctions; critical current; high-T/sub c/ DC SQUID; intrinsic junction capacitance; large hysteresis parameters; microwave irradiation; modulation signals; multilevel devices; output voltage; resistively shunted junction model; Electrodes; Hysteresis; Insulation; Josephson junctions; Plasma temperature; Quantum capacitance; SQUIDs; Superconducting devices; Voltage; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
