Total Dose Ionizing Radiation Effects in the Indium–Zinc Oxide Thin-Film Transistors

Author

Yuan Liu ; Wei-Jing Wu ; Yun-fei En ; Lei Wang ; Zhi-Feng Lei ; Xiao-Han Wang

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China

Volume

35

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

369

Lastpage

371

Abstract

This letter deals with the total dose ionizing radiation effects in the amorphous indium-zinc oxide thin-film transistors (IZO TFTs). After radiation, a negative shift of threshold voltage was observed. The experimental results show electron field effect mobility, subthreshold swing, and low frequency noise were increased after radiation. Furthermore, the influences of bias and gate length on the radiation effect of IZO TFTs are also presented.

Keywords

indium compounds; radiation hardening (electronics); thin film transistors; zinc compounds; IZO TFT; amorphous indium-zinc oxide thin-film transistors; electron field effect mobility; frequency noise; negative shift; subthreshold swing; threshold voltage; total dose ionizing radiation effects; Electron traps; Insulators; Logic gates; Radiation effects; Thin film transistors; Threshold voltage; Indium–zinc oxide (IZO); ionizing radiation; thin-film transistor; total dose; worst case bias;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2301801

Filename

6730680