Title :
RF model of 3-RC network structure for metal-insulator-metal capacitor
Author :
Kang, I.M. ; Choi, Tae-Hoon ; Joe, J.H. ; Jung, Sang-Joong ; Jung, S.J. ; Lee, H. ; Jo, G. ; Kim, Y.-K. ; Kim, Y.K. ; Choi, Kyu-Myung
Author_Institution :
Syst. LSI Div., Samsung Electron. Co. Ltd., Seoul
Abstract :
A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20 GHz. The effects of substrate network components on MIM´s frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.
Keywords :
MIM devices; Q-factor; RC circuits; capacitors; equivalent circuits; integrated circuit modelling; radiofrequency integrated circuits; 3-distributed RC network structure; MIM capacitor impedance; Q-factor; RF model; Z-parameters; effective capacitance; metal-insulator-metal capacitor; quality factor; radio-frequency equivalent circuit model; side bottom plate contact; substrate network components;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081339
