DocumentCode :
862714
Title :
Population inversion in P-N junctions
Author :
Nordman, J.E.
Volume :
52
Issue :
6
fYear :
1964
fDate :
6/1/1964 12:00:00 AM
Firstpage :
724
Lastpage :
725
Keywords :
Charge carrier density; Charge carrier processes; Doping; Energy states; P-n junctions; Production; Radiative recombination; Semiconductor diodes; Space charge; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3072
Filename :
1445002
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=862714
