Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs

Author

Goronkin, Herb ; Tehrani, Saied ; Remmel, Tom ; Fejes, Peter L. ; Johnston, K.J.

Author_Institution

Motorola Inc., Tempe, AZ, USA

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

281

Lastpage

288

Abstract

Hypoeutectic AuGe/Ni ohmic contacts on GaAs and GaAs/AlGaAs were characterized by SEM, TEM, and energy dispersive X-ray analysis. The two main components of the contact were confirmed to be NiGeAs islands distributed in an Au-Ga alloy. The NiGeAs islands were larger and more evenly distributed on GaAs MESFETs than on GaAs/AlGaAs MODFETs. Vertical penetration was impeded but not halted by AlGaAs. Since the contacts did not melt during the alloying cycle, there was no lateral encroachment observed

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; germanium alloys; gold alloys; high electron mobility transistors; nickel; ohmic contacts; Au-Ga alloy; AuGe-Ni-AlGaAs-GaAs; AuGe-Ni-GaAs; EDAX; GaAs; GaAs-AlGaAs; HEMT; MESFETs; MODFETs; NiGeAs islands; SEM; TEM; alloying cycle; encroachment; energy dispersive X-ray analysis; hypoeutectic ohmic contacts; ohmic contact penetration; semiconductors; vertical penetration; Alloying; Contact resistance; Electrons; FETs; Gallium arsenide; Gold; HEMTs; MODFETs; Ohmic contacts; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19927

Filename

19927