MESFETs Made From Individual GaN Nanowires

Author

Blanchard, Paul T. ; Bertness, Kris A. ; Harvey, Todd E. ; Mansfield, Lorelle M. ; Sanders, Aric W. ; Sanford, Norman A.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO

Volume

7

Issue

6

fYear

2008

Firstpage

760

Lastpage

765

Abstract

In this paper, we demonstrate novel MESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average ideality factor of 1.6. In addition, the Schottky gates efficiently modulated the conduction of the nanowires. The threshold gate voltages required for complete pinch off were as small as -2.6 V, and transconductances exceeded 1.4 muS. Subthreshold swings approaching 60 mV/decade and on/off current ratios of up to 5times10⁸ were achieved. These results show that the Schottky gate has the potential to significantly improve the performance of GaN nanowire field-effect devices.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; Schottky gate field effect transistors; gallium compounds; nanowires; rectification; semiconductor quantum wires; wide band gap semiconductors; GaN; MESFET; Schottky barrier height; Schottky diode rectification; Schottky gates; ideality factor; nanowire field-effect devices; threshold gate voltages; transconductances; GaN; MESFETs; Schottky barriers; Schottky diodes; nanowires;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2008.2005492

Filename

4625950