Impacts of $\hbox {N}_{2}$ and $\hbox {NH}_{3}$ Plasma Surface Treatments on High-Performance

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility mu_FE improvements of ~ 86.0% and 112.5% are observed for LTPS-TFTs with HfO₂ gate dielectric after N₂ and NH₃ plasma surface treatments, respectively. In addition, the N₂ and NH₃ plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility mu_FE at high gate bias voltage V _G, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V _TH ~ 0.33 V, excellent subthreshold swing S.S. ~ 0.156 V/decade, and high field-effect mobility mu_FE ~ 62.02 cm² V middots would be suitable for the application of system-on-panel.