Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors

Author

Xia, Tongsheng ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA

Volume

5

Issue

2

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

80

Lastpage

83

Abstract

We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.

Keywords

Schottky barriers; carbon nanotubes; energy gap; leakage currents; nanotube devices; transistors; C; SBCNT; Schottky-barrier source-drain contacts; band-gap states; minimum off-state leakage current; thermal emission; tunneling; ultrascaled Schottky-barrier carbon nanotube transistors; Carbon nanotubes; Couplings; FETs; Information systems; Leakage current; Photonic band gap; Schottky barriers; Silicon; Subthreshold current; Tunneling; Band-gap states; Schottky barrier; minimum leakage current;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.869693

Filename

1605217