DocumentCode :
864011
Title :
Hydrogen induced surface states at a Si–SiO
2
interface
Author :
Zaininger, K.H. ; Warfield, G.
Volume :
52
Issue :
8
fYear :
1964
Firstpage :
972
Lastpage :
973
Keywords :
Capacitance; Conducting materials; Conductivity measurement; Electrodes; Frequency measurement; Frequency response; Hydrogen; Oxidation; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3197
Filename :
1445127
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=864011
