Title :
Short-channel effect in fully depleted SOI MOSFETs
Author :
Young, K. Konrad
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness
Keywords :
insulated gate field effect transistors; semiconductor device models; Si film thickness; computer simulation; fully depleted SOI MOSFETs; model; short-channel effect; two-dimensional analytical model; vertical field; Analytical models; Capacitance; Computer simulation; Dielectric constant; Doping; MOSFETs; Poisson equations; Semiconductor films; Silicon devices; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
