Title :
Impact of Moisture From Passivation on Endurance and Retention of NAND Flash Memory
Author :
Zih-Song Wang ; Te-Yuan Yin ; Tzung-Hua Ying ; Ya-Jui Lee ; Chieh-Yi Lu ; Arakawa, H. ; Chrong Jung Lin
Author_Institution :
Microelectron. Lab., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
This study investigates how the passivation process impacts floating gate type NAND flash reliability. The hydrogen post-metallization anneal step sequence in the process flow and film deposition of passivation layer significantly influence endurance and retention performance. Experimental results indicate that the degradation mechanism is the water diffusion model. The optimized process flow of the passivation layer is proposed as well.
Keywords :
NAND circuits; coating techniques; diffusion; flash memories; integrated circuit metallisation; integrated circuit reliability; passivation; NAND flash memory; degradation mechanism; endurance performance; film deposition; floating gate type NAND flash reliability; hydrogen post-metallization anneal step sequence; moisture impact; optimized process flow; passivation layer; passivation process; retention performance; water diffusion model; Ash; Degradation; Hydrogen; Moisture; Passivation; Reliability; Stress; Moisture model; NAND flash; passivation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2228864
