Title :
Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV
Author :
Umezawa, Hitoshi ; Matsumoto, Tad ; Shikata, Shin-ichi
Author_Institution :
Diamond Res. Group, Nat. Inst. of Adv. Ind. Sci. & Technol., Ikeda, Japan
Abstract :
A diamond metal-semiconductor field-effect transistor (MESFET) with a Pt Schottky gate was fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain current of the MESFET operated at 300 °C was 20 times higher than that at room temperature due to the activation of acceptors. The breakdown voltage was highly dependent on the gate-drain length and reached 1.5 kV at a gate-drain length of 30 μm, which is the highest reported for a diamond FET.
Keywords :
Schottky gate field effect transistors; diamond; semiconductor device breakdown; MESFET; Schottky gate; breakdown voltage; drain current; gate drain length; metal semiconductor field effect transistor; pinchoff characteristics; size 30 mum; temperature 293 K to 298 K; temperature 300 degC; voltage 1.5 kV; Diamonds; Logic gates; MESFETs; Schottky diodes; Temperature; Temperature measurement; Diamond; breakdown voltage; metal-semiconductor field-effect transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2356191
