Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Author

Umezawa, Hitoshi ; Matsumoto, Tad ; Shikata, Shin-ichi

Author_Institution

Diamond Res. Group, Nat. Inst. of Adv. Ind. Sci. & Technol., Ikeda, Japan

Volume

35

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

1112

Lastpage

1114

Abstract

A diamond metal-semiconductor field-effect transistor (MESFET) with a Pt Schottky gate was fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain current of the MESFET operated at 300 °C was 20 times higher than that at room temperature due to the activation of acceptors. The breakdown voltage was highly dependent on the gate-drain length and reached 1.5 kV at a gate-drain length of 30 μm, which is the highest reported for a diamond FET.

Keywords

Schottky gate field effect transistors; diamond; semiconductor device breakdown; MESFET; Schottky gate; breakdown voltage; drain current; gate drain length; metal semiconductor field effect transistor; pinchoff characteristics; size 30 mum; temperature 293 K to 298 K; temperature 300 degC; voltage 1.5 kV; Diamonds; Logic gates; MESFETs; Schottky diodes; Temperature; Temperature measurement; Diamond; breakdown voltage; metal-semiconductor field-effect transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2356191

Filename

6910291