Title :
InAs/InP 1550 nm quantum dash semiconductor optical amplifiers
Author :
Bilenca, A. ; Alizon, R. ; Mikhelashvili, V. ; Eisenstein, G. ; Schwertberger, R. ; Gold, D. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Quantum confined laser and optical amplifier structures based on quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years. Owing to their superb optoelectronic properties such as wide gain bandwidth, low threshold current density, low a parameter and fast switching response, QD-based devices are expected to play a major role in future fibre optics systems and networks.
Keywords :
III-V semiconductors; indium compounds; multiwave mixing; quantum dot lasers; semiconductor optical amplifiers; spontaneous emission; 1550 nm; CW signals; InAs-InP; dynamical nonlinear characteristics; fast switching response; four-wave mixing; gas source MBE; low alpha parameter; low threshold current density; quantum confined optical amplifier; quantum dash semiconductor optical amplifiers; separate confinement heterostructure; small signal gain; spontaneous emission spectrum; symmetric conversion efficiency response; wide gain bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020928
