• DocumentCode
    865331
  • Title

    High performance 1500 V 4H-SiC junction barrier Schottky diodes

  • Author

    Zhao, J.H. ; Alexandrov, P. ; Fursin, L. ; Feng, Z.C. ; Weiner, M.

  • Author_Institution
    United Silicon Carbide Inc., New Brunswick, NJ, USA
  • Volume
    38
  • Issue
    22
  • fYear
    2002
  • fDate
    10/24/2002 12:00:00 AM
  • Firstpage
    1389
  • Lastpage
    1390
  • Abstract
    The design, fabrication and characterisation results are reported of junction barrier Schottky (JBS) diodes of 1500 V-9 A and 1000 V-50 A based on 10.5 μm 4H-SiC blocking layers doped to 6.4 × 1015 cm-3 and 1.3 × 1016 cm-3, respectively. The clear advantages of JBS diodes over conventional Schottky diodes can be achieved without extra fabrication penalty.
  • Keywords
    Schottky diodes; silicon compounds; wide band gap semiconductors; 10.5 micron; 1000 V; 1500 V; 4H-SiC junction barrier Schottky diodes; 50 A; 9 A; I-V characteristics; JBS diodes; SiC; blocking layers; design; fabrication;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020947
  • Filename
    1047117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=865331