DocumentCode
865577
Title
Biasing of silicon transistors
Author
Simpson, J.H.
Author_Institution
National Research Council of Canada, Radio and Electrical Engineering Division, Ottawa, Canada
Volume
1
Issue
2
fYear
1965
fDate
4/1/1965 12:00:00 AM
Firstpage
33
Lastpage
34
Abstract
A modification of the voltage-feedback bias circuit applicable to modern silicon transistors is described, and formulas are given for the calculation of performance. For moderate power-supply potentials, variations in VCE can be held within 1.0 V for a temperature rise of 75 degC.
Keywords
amplifiers; circuit theory; transistor circuits; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19650031
Filename
4205391
Link To Document