DocumentCode
865847
Title
Investigation of an L–band tunnel–diode amplifier at low temperatures
Author
Stachejko, V.
Volume
52
Issue
11
fYear
1964
Firstpage
1368
Lastpage
1369
Keywords
Gallium arsenide; Germanium; L-band; Low-noise amplifiers; Noise figure; Noise measurement; Noise reduction; Semiconductor device noise; Semiconductor diodes; Temperature dependence;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1964.3392
Filename
1445322
Link To Document