Short-channel effects in SOI MOSFETs

Author

Veeraraghavan, Surya ; Fossum, Jerry G.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

36

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

522

Lastpage

528

Abstract

Short-channel effects in thin-film silicon-on-insulator (SOI) MOSFETs are shown to be unique because of dependences on film thickness and body and back-gate (substrate) biases. These dependences enable control of threshold-voltage reduction, channel-charge enhancement due to a drain bias, carrier velocity saturation, channel-length modulation and its effect on output conductance, as well as device degradation due to hot carriers in short-channel SOI MOSFETs. A short-channel effect exclusive to SOI MOSFETs, back-surface charge modulation, is described. Because of the short-channel effects, the use of SOI MOSFETs in VLSI circuits provides the designer with additional flexibility as compared to bulk-MOSFET design. Various design tradeoffs are discussed

Keywords

VLSI; field effect integrated circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; Si-SiO₂; VLSI; back gate bias; back-surface charge modulation; carrier velocity saturation; channel-charge enhancement; channel-length modulation; control of threshold-voltage reduction; design tradeoffs; device degradation; drain bias; film thickness; flexibility; output conductance; short-channel SOI MOSFETs; short-channel effects; Degradation; Flexible printed circuits; Hot carriers; MOSFETs; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Substrates; Velocity control; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19963

Filename

19963