• DocumentCode
    866124
  • Title

    SnO2 RGTO UV activation for CO monitoring

  • Author

    Comini, Elisabetta ; Ottini, Luca ; Faglia, Guido ; Sberveglieri, Giorgio

  • Author_Institution
    Gas Sensor Lab., INFM, Brescia, Italy
  • Volume
    4
  • Issue
    1
  • fYear
    2004
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    In this paper, we present recent results regarding the activation of sensors with high density power light of energy in the range of the energy gap of the semiconductor. We report the measurements registered for tin-oxide rheotaxial growth and thermal oxidation deposited layers using CO as a target gas. The influence of doping on the activated gas-sensing properties has been investigated. We have found the value of the incident power corresponding to the best gas-sensing performances (response enhancement and kinetics). The comparison between dark and irradiation condition is presented for the different kind of layers tested.
  • Keywords
    IV-VI semiconductors; chemical vapour deposition; energy gap; epitaxial growth; gas sensors; tin compounds; CO; CO monitoring; RGTO UV activation; SnO2; carbon monoxide; doping; energy gap; gas sensors; gas-sensing properties; high density energy power light; semiconductor; thermal oxidation; tin-oxide rheotaxial growth; tin-oxide sensor; Gas detectors; Kinetic theory; Lattices; Lighting; Monitoring; Photoconducting materials; Pollution; Semiconductor materials; Silicon; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2003.822216
  • Filename
    1261856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=866124