Integrated complementary devices fabricated by electrochemical techniques

Various circuit advantages accrue from the use of complementary device structures; actual or potential improvements in size, cost, and reliability accrue from the use of integrated circuits. An amalgam of these advantages has so far been inhibited, however, by the lack of practical techniques for producing essentially identical diffusion profiles of n- and p-type dopants in different regions of the silicon substrate. A method of overcoming this difficulty is described, using diffusion from impurity-doped anodic SiO2films. The fabrication techniques are outlined, and the electrical characteristics of diode structures fabricated in this way are presented.