• DocumentCode
    866261
  • Title

    Arsenic polyps on contacts to GaAs

  • Author

    Goronkin, Herbert ; Convey, D.

  • Author_Institution
    Motorola Inc., Tempe, AZ, USA
  • Volume
    36
  • Issue
    3
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    600
  • Lastpage
    603
  • Abstract
    Features resembling polyps composed of As2O3 observed on GaAs devices under two conditions are discussed. In one case they appear on top of multilayer metal contacts on GaAs and are related to the presence of Au in the contact materials that reacts with underlying GaAs. In the other case, they appear both on metal and exposed GaAs surfaces and are related to the presence of humidity acting under the influence of metal-semiconductor contact potentials
  • Keywords
    III-V semiconductors; failure analysis; gallium arsenide; humidity; ohmic contacts; semiconductor-metal boundaries; As2O3 anomalous growths; As2O3 polyps; GaAs devices; contacts to GaAs; exposed GaAs surfaces; humidity; metal-semiconductor contact potentials; multilayer metal contacts; presence of Au; Capacitance; Circuits; Electrodes; Gallium arsenide; Gold; Ohmic contacts; P-n junctions; Silicon; Size measurement; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.19974
  • Filename
    19974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=866261