• DocumentCode
    866270
  • Title

    Plasma-anodized thin-film capacitors for integrated circuits

  • Author

    Tibol, G.J. ; Kaufman, W.M.

  • Author_Institution
    General Instrument Corp., Newark, N.J.
  • Volume
    52
  • Issue
    12
  • fYear
    1964
  • Firstpage
    1465
  • Lastpage
    1468
  • Abstract
    This paper presents the characteristics of Al2O3capacitors formed by the relatively new technique of gaseous plasma anodization. This process can be incorporated into a thin-film deposition process cycle thereby providing the advantage of minimizing contamination possibilities. The formation technique is briefly described and device properties are presented in detail.
  • Keywords
    Capacitors; Chemical vapor deposition; Conductive films; Dielectrics; Fabrication; Instruments; Plasma devices; Plasma properties; Plasma sources; Thin film circuits;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1964.3431
  • Filename
    1445361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=866270