Infrared phase modulators with multiple quantum wells

Author

Holm, David A. ; Taylor, Henry F.

Author_Institution

Boeing Aerosp. & Electron., Seattle, WA, USA

Volume

25

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2266

Lastpage

2271

Abstract

The intraband transition of a graded Ga_1-xAl_xAs/AlAs quantum well is analyzed for its suitability as a phase modulator at infrared wavelengths. Using the effective mass model and numerically solving Schrodinger´s equation for a graded energy well with an external electric field, it is found that significant phase changes are possible for comparatively small voltages even for operation far from the absorption resonance. In an example, the calculated value for V_π at 10.6 μm is 150 V, an improvement by over two orders of magnitude over conventional bulk electrooptic material for that wavelength regime

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; electro-optical devices; gallium arsenide; numerical analysis; optical modulation; semiconductor quantum wells; 10.6 micron; 150 V; Ga_1-xAl_xAs-AlAs; III-V semiconductor; Schrodinger´s equation; absorption resonance; bulk electrooptic material; effective mass model; external electric field; graded energy well; infrared wavelengths; intraband transition; multiple quantum wells; numerical solution; phase modulators; Artificial intelligence; Effective mass; Electrons; Frequency; Numerical models; Optical materials; Phase modulation; Resonance; Schrodinger equation; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.42055

Filename

42055