DocumentCode
866671
Title
Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source
Author
Wilson, S.R. ; Gregory, R.B. ; Paulson, W.M. ; Diehl, H.T. ; Hamdi, A.H. ; McDaniel, F.D.
Author_Institution
Semiconductor Research and Development Laboratory Motorola, Inc. 5005 E. McDowell Road, Phoenix, AZ 85008
Volume
30
Issue
2
fYear
1983
fDate
4/1/1983 12:00:00 AM
Firstpage
1734
Lastpage
1737
Keywords
Annealing; Boron; Electron beams; Impurities; Infrared heating; Ion implantation; Isothermal processes; Silicon; Surface emitting lasers; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1983.4332627
Filename
4332627
Link To Document