Characteristics of Bloch line memory read operation in 2 μm bubble material

Author

Matsuyama, K. ; Chikamatsu, K. ; Asada, H.

Author_Institution

Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan

Volume

26

Issue

5

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

2517

Lastpage

2519

Abstract

The read operation performance in Block line memory has been studied using a typical 2-μm bubble material. A reasonable operation margin for chopping detection of a vertical Block line was obtained with a hair-pin-type chopping conductor with a 4-μm pattern width and 1.5-μm pattern gap. The chopping current margin and the bias-field margin are 146 mA±4.1%, and 107 Oe±6.1%, respectively. Domain-wall configurations during the chopping process have been studied numerically and compared with experimental results. Simulation results suggest that operation performance degradation can be ascribed to horizontal Bloch line nucleation during the chopping process

Keywords

magnetic bubble memories; 2 micron; Bloch line memory read operation; bias-field margin; bubble material; chopping detection; domain-wall configurations; hair-pin-type chopping conductor; horizontal Bloch line nucleation; operation margin; operation performance degradation; vertical Block line; Azimuthal angle; Computational modeling; Conducting materials; Conductive films; Equations; Hip; Magnetic analysis; Magnetic fields; Magnetic materials; Solids;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.104782

Filename

104782