Immunity Analysis and Experimental Investigation of a Low-Noise Amplifier Using a Transient Voltage Suppressor Diode Under Direct Current Injection of HPM Pulses

Author

Liang Zhou ; Shuo Zhang ; Wen-Yan Yin ; Jun-Fa Mao

Author_Institution

Key Lab. of Design & Electromagn. Compatibility of High-Speed Electron. Syst., Center for Microwave & RF Technol., Shanghai, China

Volume

56

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

1715

Lastpage

1718

Abstract

This study evaluates the immunity of a low-noise amplifier (LNA) using a transient voltage suppressor (TVS) diode under direct current injection high-power microwave (HPM) pulses. The ac behavior of the TVS diode is examined. Both experiments and analysis demonstrate that the injected HPM power to failure of the LNA is increased by a factor of about 6 through the introduction of a TVS diode, the power to failure of the LNA is also related to the proportion of the direct current injected into the TVS diode and LNA. This analysis is useful for further discussion regarding semiconductor protection under HPM pulses.

Keywords

failure analysis; low noise amplifiers; semiconductor diodes; transients; HPM pulses; LNA; TVS diode; ac behavior; direct current injection high-power microwave pulses; immunity analysis; low-noise amplifier; power to failure; semiconductor protection; transient voltage suppressor diode; Integrated circuit modeling; Pulse measurements; Radio frequency; Resistance; Semiconductor diodes; Transient analysis; Direct current injection (DCI) of high-power microwave (HPM) pulses; immunity analysis; intentional electromagnetic interference (IEMI); low-noise amplifier (LNA); transient voltage suppressor (TVS) diode;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2014.2332182

Filename

6851160