Title :
Turnover phenomenon of N+N N+plate contact silicon device and second breakdown in transistors
Author :
Agatsuma, T. ; Kohisa, T. ; Sugiyama, Akihiko
Author_Institution :
Musashi Works, Hitachi, Ltd., Tokyo, Japan
Keywords :
Conductivity; Delay effects; Electric breakdown; Electric resistance; P-n junctions; Silicon devices; Temperature dependence; Temperature sensors; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1965.3545
