Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs

Author

Kim, DukSoo ; Jung, YoungChai ; Park, MiYoung ; Kim, ByungSung ; Hong, SuHeon ; Choi, Minsu ; Kang, MyungGil ; Yu, YunSeop ; Whang, Dongmok ; Hwang, Sungwoo

Author_Institution

Sch. of Adv. Mater. & Eng., Sungkyunkwan Univ., Suwon

Volume

7

Issue

6

fYear

2008

Firstpage

683

Lastpage

687

Abstract

We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.

Keywords

Schottky diodes; contact resistance; elemental semiconductors; field effect transistors; nanowires; semiconductor device models; silicon; FET; Schottky diodes; Si; activation energy; backgated bottom-up silicon nanowire; contact resistance; electrical characteristics; field effect mobility; source-drain contacts; temperature 300 K to 160 K; voltage drop; Back gate; contact resistance; mobility extraction; silicon nanowire (SiNW) FET;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2008.2005636

Filename

4627459