Title :
Oscillators and amplifiers in integrated E-plane technique
Author :
Hoefer, Wolfgang J R
Author_Institution :
Dept. of Electr. Eng., Ottawa Univ., Ont., Canada
fDate :
2/1/1989 12:00:00 AM
Abstract :
An overview is presented of solid-state oscillators and amplifiers realized in E-plane technology. The circuit topology, basic design procedures, and performance characteristics are described and compared. Gunn oscillators, IMPATT oscillators, transistor oscillators, injection-locked Gunn oscillators, and transistor amplifiers are surveyed. Gunn and transistor oscillators have been realized successfully for frequencies from 10 to 110 GHz, thus covering almost the entire frequency range suitable for E-plane technology. IMPATT oscillators are difficult to design and to reproduce in quasi-planar form because of the high impedance ratio that must be overcome by the circuit. E-plane FET amplifiers have been built for frequencies up to 60 GHz
Keywords :
microwave amplifiers; microwave oscillators; solid-state microwave circuits; 10 to 110 GHz; FET amplifiers; Gunn oscillators; IMPATT oscillators; circuit topology; design procedures; impedance ratio; injection-locked Gunn oscillators; integrated E-plane technique; performance characteristics; solid-state amplifiers; solid-state oscillators; transistor amplifiers; transistor oscillators; Circuit topology; Diodes; Electromagnetic waveguides; FETs; Flexible printed circuits; Frequency; Gunn devices; Impedance; Injection-locked oscillators; Integrated circuit technology; Packaging; Radar; Solid state circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
