• DocumentCode
    868076
  • Title

    p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

  • Author

    Yu, Hyun-Yong ; Ishibashi, Masato ; Park, Jin-Hong ; Kobayashi, Masaharu ; Saraswat, Krishna C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA
  • Volume
    30
  • Issue
    6
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    675
  • Lastpage
    677
  • Abstract
    We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ~80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.
  • Keywords
    CMOS integrated circuits; MOSFET; VLSI; aluminium; elemental semiconductors; epitaxial growth; germanium; hole mobility; semiconductor growth; silicon; Al2O3; Ge; GeO2; Si; SiO2; gate dielectric stack; heteroepitaxially growth; hole mobility; p-channel integrated MOSFET; pMOSFET fabrication; Anneal; MOSFET; dislocation; germanium; heteroepitaxy; hydrogen; selective growth;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2019847
  • Filename
    4926161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=868076