DocumentCode :
868479
Title :
Space radiation effects on transistor gain
Author :
Sullivan, D.C.
Volume :
53
Issue :
2
fYear :
1965
Firstpage :
209
Lastpage :
209
Keywords :
Degradation; Diodes; Equations; Ionizing radiation; Leakage current; Least squares methods; P-n junctions; Radiation effects; Surface fitting; Testing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3648
Filename :
1445578
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=868479
