Author_Institution :
University of Saskatchewan, Department of Electrical Engineering, Saskatoon, Canada
Abstract :
The effects of temperature on m.o.s. transistors, operated in the pinchoff mode under constant-current conditions, are examined. A theoretical derivation, which accounts for interface and substrate conditions, is presented for the temperature coefficient of the gate-source voltage. Experimental measurements on both n- and pchannel silicon m.o.s. transistors are compared with theory.
