Title :
Small-signal admittance of a Gunn-effect device
Author_Institution :
Royal Radar Establishment, Malvern, UK
fDate :
6/1/1966 12:00:00 AM
Abstract :
A small-signal equivalent circuit of a Gunn-effect device is deduced from a simple model. Preliminary measurements substantiate this equivalent circuit. The results are used to calculate the small-signal admittance of a 1¿cm GaAs Gunn-effect device at 10 Gc/s.
Keywords :
Gunn effect; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660175
