Title :
Behaviour of m.o.s. structures under X ray irradiation
Author :
Giralt, G. ; Andre, B. ; Simonne, J. ; Esteve, D.
Author_Institution :
Université de Toulouse, Laboratoire de Génie Ã\x89lectrique, Toulouse, France
fDate :
6/1/1966 12:00:00 AM
Abstract :
Experiments on m.o.s. structures when irradiated by X rays involve distributions of positive charges in the dielectric layer. As an interpretation of the results, including the curing of irradiated devices by annealing, we propose ionic-charge motions in the oxidised silicon, depending on the sense of the applied electric field.
Keywords :
radiation; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660176
