High-temperature operation of junction field-effect transistors in the forward-bias mode

Factors affecting d.c. gate leakage of forward-biased junction f.e.t.s over extended temperature ranges are considered, and an arrangement resulting in gate-current variations of some tens of picoamperes only up to 70°C is described. Finally, it is shown that fairly low voltage drift, as well as low current drift, can be achieved for forward-biased junction f.e.t.s by means of a simple temperature-compensating circuit.